CST仿真天線雙站RCS饋電點處加不加波導端口？

樓主最近在學習天線雙站RCS仿真，發(fā)現(xiàn)一個現(xiàn)象，例如一個最簡單的貼片天線，背后同軸線饋電，正上方用平面波照射，如果背后的同軸線不設置波導端口，得出雙站RCS的結(jié)果，然后不知怎么滴腦袋一抽，給同軸線端口設置了波導端口，仿真出來的結(jié)果和不加的完全不一樣，而且在一維結(jié)果里有個F-Parameter的參數(shù)（我選擇的激勵源都是平面波）。這兩個的不同之處在什么地方？F-parameter指的是什么參數(shù)？看的很多文章里都是沒有提到這個參數(shù)的，所以樓主很是疑惑，雙站RCS的仿真方法究竟是哪一種呢？或者說都代表了什么意思呢？

希望知道這方面的大神指導一下啊

你需要百度一下，看看天線的結(jié)構項RCS和模式項RCS的區(qū)別和定義

請學會使用軟件的幫助文件。
CST MWS幫助文件《Reference and Normalizing》：
S-Parameter and F-Parameter calculation
In general, S-Parameter results are given as the ratio of incident and reflected voltage wave spectra at a port, where only one port is excited and all others are perfectly matched. Consequently, for transient simulations, all port signals first have to be transformed into the frequency domain, providing broadband results for one port excitation with only one simulation run.
However, in the case of simultaneous excitation several ports are stimulated at once, so it is not possible to apply the general S-Parameter definition. Now the incident and reflected spectra are given as so-called incident and reflected F-Parameters, all normalized to the spectrum of the reference signal. Furthermore, as an additional result and for a better analysis of the structure's behavior, the reflected spectra of all excited ports are normalized to their own incident spectra, respectively, providing so-called active S-Parameters. Since there might be more energy absorbed at a specific port than it itself has injected, the resulting curves could show active behaviour with values greater than one.
Please note that also in the case of a plane wave or field source excitation, the outgoing signals at ports are used to determine F-Parameters as described above.

謝謝，目前還不太會使用幫助文件，只能慢慢學習了

點鼠標的事情能有多難？

Since there might be more energy absorbed at a specific port than it itself has injected, the resulting curves could show active behaviour with values greater than one.
這句話很有道理啊

饋電口不設成 波導口，那就是開路狀態(tài)，和匹配狀態(tài)肯定差很多